VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 1 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery rectifier diode, 85 a features ? 150 c max. operatin g junction temperature ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where severe restrictions on conducted emi should be met ? screw mounting only ? designed and qualified according to jedec-jesd47 ? powertab ? package ? compliant to rohs directive 2002/95/ec description the VS-85EPF12 fast soft reco very rectifier series has been optimized for combined short re verse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe te mperature and power cycling conditions. available in the new powertab ? package, this new series is suitable for a large range of applications combining excellent die to footprint ra tio and sturdeness connectivity for use in high current environments. product summary package powertab ? i f(av) 85 a v r 1200 v v f at i f 1.36 v i fsm 110 a t rr 95 ns t j max. 150 c diode variation single die snap factor 0.5 cathode anode powertab ? major ratings and characteristics symbol characteristics values units i f(av) rect. conduction 50 % duty cycle at t c = 85 c 85 a i f(rms) 160 v rrm range 1200 v i fsm 110 a v f 100 a, t j = 25 c 1.4 v t rr 1 a, - 100 a/s 95 ns t j range - 40 to 150 c voltage ratings type number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma VS-85EPF12 1200 1300 15 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 85 c, 180 conduction half sine wave 85 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 1100 10 ms sine pulse, no voltage reapplied 1250 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 5000 a 2 s 10 ms sine pulse, no voltage reapplied 7000 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 70 000 a 2 ? s
VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 2 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 85 a, t j = 25 c 1.36 v forward slope resistance r t t j = 150 c 4.03 m ? threshold voltage v f(to) 0.87 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 15 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 85 a pk 25 a/s 25 c 480 ns reverse recovery current i rr 7.1 a reverse recovery charge q rr 2.1 c snap factor s 0.5 i fm t rr dir dt i rm(rec) q rr t t a t b thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style powertab ? 85epf12
VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 3 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current maximum allowable case temperature (c) average forwar d current (a) 40 30 20 10 60 70 50 80 90 0 110 140 130 150 70 90 100 120 80 93159_01 r thjc (dc) = 0.35 k/w 30 60 90 120 180 ? conduction angle maximum allowable case temperature (c) average forwar d current (a) 80 60 40 20 100 120 140 0 90 110 130 140 150 70 80 100 120 r thjc (dc) = 0.35 c/w 30 60 90 120 180 dc 93159_02 conduction period ? maximum average forwar d power loss (w) average forwar d current (a) 10 20 30 90 50 70 40 60 80 0 0 140 160 120 100 80 60 20 40 180 120 90 60 30 rm s limit t j = 150 c 93159_03 ? conduction angle maximum average forwar d power loss (w) average forwar d current (a) 20 40 60 140 100 80 120 0 0 160 200 120 180 140 100 80 60 20 40 93159_04 dc 180 120 90 60 30 rm s limit t j = 150 c conduction period ? peak half s ine wave forwar d current (a) number of equal amplitu d e half cycle current pulses (n) 10 100 1 300 500 700 1000 400 600 800 1100 900 1200 at any rated load condition and with rated v rrm applied following s urge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 93159_05 peak half s ine wave forwar d current (a) pulse train duration (s) 0.1 1 0.01 300 500 700 1000 400 600 800 1200 1100 1300 900 1400 93159_06 maximum non-repetitive s urge current ver s u s pul s e train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 4 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c instantaneous forwar d current (a) instantaneous forwar d voltage (v) 0 0.5 1.0 1.5 2.5 3.5 2.0 3.0 4.0 4.5 1 10 1000 100 t j = 150 c t j = 25 c 93159_07 0.04 0.08 0.14 0.20 0.06 0.10 0.16 0.12 0.18 0.22 0 d i/ d t - rate of fall of forwar d current (a/s) t rr - maximum reverse recovery time (s) 200 160 120 80 40 t j = 25 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 80 a i fm = 125 a i fm = 40 a 93159_08 0 0.2 0.5 0.1 0.3 0.4 0.6 0 d i/ d t - rate of fall of forwar d current (a/s) t rr - maximum reverse recovery time (s) 200 160 120 80 40 93159_09 i fm = 1 a i fm = 10 a i fm = 20 a i fm = 80 a i fm = 40 a t j = 150 c 0 1.0 3.0 0.5 1.5 2.0 4.0 2.5 3.5 0 d i/ d t - rate of fall of forwar d current (a/s) q rr - maximum reverse recovery charge (c) 200 160 120 80 40 93159_10 t j = 25 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 125 a i fm = 80 a i fm = 40 a 0 4 12 2 6 8 14 10 0 d i/ d t - rate of fall of forwar d current (a/s) q rr - maximum reverse recovery charge (c) 200 160 120 80 40 93159_11 i fm = 1 a i fm = 10 a i fm = 20 a i fm = 80 a i fm = 40 a t j = 150 c 0 8 18 4 12 6 2 10 14 22 16 20 0 d i/ d t - rate of fall of forwar d current (a/s) i rr - maximum reverse recovery current (a) 200 160 120 80 40 93159_12 t j = 25 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 125 a i fm = 80 a i fm = 40 a
VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 5 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 0 20 10 30 15 5 25 35 45 40 0 d i/ d t - rate of fall of forwar d current (a/s) i rr - maximum reverse recovery current (a) 200 160 120 80 40 93159_13 i fm = 1 a i fm = 10 a i fm = 20 a i fm = 80 a i fm = 40 a t j = 150 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - thermal impe d ance (k/w) 93519_14 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 s ingle pul s e s teady s tate value (dc operation)
VS-85EPF12 soft recovery series www.vishay.com vishay semiconductors revision: 17-jun-11 6 document number: 93159 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 1 - vishay semiconductors product 2 - current rating 3 - circuit configuration: e = single diode p = to-247ac 4 - package: 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm (12 = 1200 v) device code 5 1 3 2 4 6 vs- 85 e p f 12 links to related documents dimensions www.vishay.com/doc?95240 part marking information www.vishay.com/doc?95370 application note www.vishay.com/doc?95179
outline dimensions www.vishay.com vishay semiconductors revision: 03-aug-11 1 document number: 95240 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powertab ? dimensions in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 4.20 (0.16) 4.00 (0.15) 4.95 (0.19) 4.75 (0.18) 5.20 (0.20) 4.95 (0.19) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) 39.8 (1.56) 39.6 (1.55) 12.40 (0.48) 12.10 (0.47) 8.45 (0.33) 8.20 (0.32) 15.60 (0.61) 14.80 (0.58) 5.45 ref. (0.21 ref.) 1.30 (0.05) 1.10 (0.04) 3.09 (0.12) 3.00 (0.11) 1.35 (0.05) 1.20 (0.04) 0.60 (0.02) 0.40 (0.01) 12.20 (0.48) 12.00 (0.47) ? 4.20 (? 0.16) ? 4.00 (? 0.15) ? 4.20 (? 0.16) ? 4.00 (? 0.15) lead 1 lead 2 lead assignments lead 1 = cathode lead 2 = anode
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